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Schottky Diode Principle
Feb 01, 2018

Schottky diodes are metal-semiconductor devices in which the noble metal (gold, silver, aluminum, platinum, etc.) is a positive electrode and the N-type semiconductor B is a negative electrode. The Schottky diode is formed by utilizing the potential barrier formed on the contact surface. Because there are a large number of electrons in N-type semiconductors and only a very small amount of free electrons in the noble metal, the electrons diffuse from high-concentration B to low-concentration A atoms. Obviously, there is no hole in the metal A, there is no diffusion of holes from A to B diffusion. As the electrons continue to diffuse from B to A, the B surface electron concentration gradually decreases and the surface neutrality is destroyed. As a result, a potential barrier is formed and the electric field direction is B → A. However, under the action of the electric field, the electrons in A also produce a drift movement from A → B, thereby weakening the electric field due to the diffusion movement. When a certain area of space charge is established, the Schottky barrier is formed by a relative balance between the electron drift caused by the electric field and the electron diffusion caused by the different concentrations.